Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation

The effects of burn-in, high temperature reverse bias (HTRB) and life tests on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices.

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE Transactions on Nuclear Science 1998-12, Vol.45 (6), p.2638-2643
Hauptverfasser:	Barillot, C., Serres, O., Marec, R., Calvel, P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bipolar integrated circuits Ceramics Circuit testing INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS Integrated circuit reliability Integrated circuit testing INTEGRATED CIRCUITS Life testing PACKAGING PERFORMANCE TESTING PHYSICAL RADIATION EFFECTS Plastics Pulse width modulation RELIABILITY RESPONSE FUNCTIONS Temperature
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