Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation

Effects of reliability screening tests on bipolar integrated circuits during total dose irradiation

The effects of burn-in, high temperature reverse bias (HTRB) and life tests on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE Transactions on Nuclear Science 1998-12, Vol.45 (6), p.2638-2643
Hauptverfasser: Barillot, C., Serres, O., Marec, R., Calvel, P.
Format: Artikel
Sprache:eng
Schlagworte:
Bipolar integrated circuits
Ceramics
Circuit testing
INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS
Integrated circuit reliability
Integrated circuit testing
INTEGRATED CIRCUITS
Life testing
PACKAGING
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
Plastics
Pulse width modulation
RELIABILITY
RESPONSE FUNCTIONS
Temperature
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Beschreibung
Zusammenfassung:The effects of burn-in, high temperature reverse bias (HTRB) and life tests on the total dose response of three different bipolar ICs are studied. Different behaviors have been observed on one type. Results analyses are consistent with the mechanisms previously reported for MOS devices.
ISSN:0018-9499
1558-1578
DOI:10.1109/23.736508