Performance of Si-Doped WO3 Thin Films for Acetone Sensing Prepared by Glancing Angle DC Magnetron Sputtering

This paper presents the acetone sensing characteristics of Si-doped (1 at.%) tungsten oxide thin films prepared by glancing angle dc magnetron sputtering. The performance of Si-doped WO 3 sensors in the concentration range of 0.04-3.8 ppm at operating temperatures of 150 °C-425 °C has been investiga...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE sensors journal 2016-02, Vol.16 (4), p.1004-1012
Hauptverfasser: Rydosz, Artur, Szkudlarek, Aleksandra, Ziabka, Magdalena, Domanski, Krzysztof, Maziarz, Wojciech, Pisarkiewicz, Tadeusz
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This paper presents the acetone sensing characteristics of Si-doped (1 at.%) tungsten oxide thin films prepared by glancing angle dc magnetron sputtering. The performance of Si-doped WO 3 sensors in the concentration range of 0.04-3.8 ppm at operating temperatures of 150 °C-425 °C has been investigated. Doping of the tungsten oxide film with Si significantly decreases the limit of detection of acetone compared with the pure WO 3 sensors reported in the literature. The gas sensor's response (S) to acetone was defined as the resistance ratio S = R air /R gas , where R air and R gas are the electrical resistances for the sensor in air and in gas, respectively. The maximum response measured in this experiment was S = 40.5. Such response was measured in the presence of 3.8 ppm of acetone at an operating temperature of 425 °C using a Si-doped (1 at.%) WO 3 thin film deposited at 300 °C and annealed at 300 °C for 4 h in air. The films phase composition, microstructure, and surface topography have been assessed by X-ray diffraction, scanning electron microscope, atomic force microscope, and energy dispersive X-ray spectroscopy methods.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2015.2496212