Compendium of single event failures in power MOSFETs

Compendium of single event failures in power MOSFETs

This compendium of SEGR and SEB data organizes results from several laboratories comparing failure thresholds for several different manufacturers and technologies. The results of this compendium are aimed at the designer to show the possible variations between manufacturers and processes. The compen...

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Bibliographische Detailangaben
Hauptverfasser: Coss, J.R., Swift, G.M., Selva, L.E., Titus, J.L., Normand, E., Oberg, D.L., Wert, J.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Laboratories
Manufacturing processes
MOSFETs
Power transistors
Propulsion
Rectifiers
Semiconductor device manufacture
Temperature
Testing
Voltage
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Beschreibung
Zusammenfassung:This compendium of SEGR and SEB data organizes results from several laboratories comparing failure thresholds for several different manufacturers and technologies. The results of this compendium are aimed at the designer to show the possible variations between manufacturers and processes. The compendium incorporates previously published data with the most recent data obtained from various sources.
DOI:10.1109/REDW.1998.731468