Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr)

The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n/sup +/-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in...

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Bibliographische Detailangaben

Hauptverfasser:	Ermolovich, I.B., Konakova, R.V., Milenin, V.V., Prokopenko, I.B., Gromashevskii, V.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemicals Chromium Contacts Gallium arsenide Metallization Physics Pulse measurements Spectroscopy Substrates Surface treatment
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