Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr)

The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n/sup +/-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in...

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Bibliographische Detailangaben
Hauptverfasser:	Ermolovich, I.B., Konakova, R.V., Milenin, V.V., Prokopenko, I.B., Gromashevskii, V.L.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Chemicals Chromium Contacts Gallium arsenide Metallization Physics Pulse measurements Spectroscopy Substrates Surface treatment
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Zusammenfassung:	The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n/sup +/-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in diode structures with a Schottky barrier. A possible mechanism of the effect of ultrasonic treatment on the structural and chemical reorganization in an M/n-n/sup +/-GaAs contact is discussed.
DOI:	10.1109/ASDAM.1998.730204