Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr)

Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr)

The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n/sup +/-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in...

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Hauptverfasser: Ermolovich, I.B., Konakova, R.V., Milenin, V.V., Prokopenko, I.B., Gromashevskii, V.L.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemicals
Chromium
Contacts
Gallium arsenide
Metallization
Physics
Pulse measurements
Spectroscopy
Substrates
Surface treatment
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creator Ermolovich, I.B.
Konakova, R.V.
Milenin, V.V.
Prokopenko, I.B.
Gromashevskii, V.L.
description The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n/sup +/-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in diode structures with a Schottky barrier. A possible mechanism of the effect of ultrasonic treatment on the structural and chemical reorganization in an M/n-n/sup +/-GaAs contact is discussed.
doi_str_mv 10.1109/ASDAM.1998.730204
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Chemicals
Chromium
Contacts
Gallium arsenide
Metallization
Physics
Pulse measurements
Spectroscopy
Substrates
Surface treatment
title Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr)
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