On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect

Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal du...

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Bibliographische Detailangaben

Hauptverfasser:	Figielski, T., Wosinski, T.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Electrodes Electrons Electrostatic interference Magnetic flux Microelectronics Physics Solids Temperature Voltage Wire
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