On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect

On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect

Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal du...

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Bibliographische Detailangaben
Hauptverfasser: Figielski, T., Wosinski, T.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electrodes
Electrons
Electrostatic interference
Magnetic flux
Microelectronics
Physics
Solids
Temperature
Voltage
Wire
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Beschreibung
Zusammenfassung:Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal due to inherent instability of such devices against charge fluctuations.
DOI:10.1109/ASDAM.1998.730158