Synthesis And Characterization Of Alicyclic Polymers With Hydrophilic Groups For 193-nm Single-Layer Resist

Synthesis And Characterization Of Alicyclic Polymers With Hydrophilic Groups For 193-nm Single-Layer Resist

ArF excimer laser (λ = 193nm) lithography is a potentially applicable technology for sub 0.15μm design rule. However, in practical use of ArF technology, there are amny problems involved in the properties of photoresist such as light transparecy for 193 nm, dry etching resistance, adhesion, sensitiv...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Min-Ho Jung, Jae-Chang Jung, Cheol-Kyu Bok, Balk, K.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Adhesives
Biomembranes
Dry etching
Electronics industry
Finishing
Lithography
Polymer gels
Resins
Resists
Spectroscopy
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:ArF excimer laser (λ = 193nm) lithography is a potentially applicable technology for sub 0.15μm design rule. However, in practical use of ArF technology, there are amny problems involved in the properties of photoresist such as light transparecy for 193 nm, dry etching resistance, adhesion, sensitivity and use of 2.38wt% tetramethyl ammonium hydroxide (TMAH) aqueous solution as a developer.
DOI:10.1109/IMNC.1998.730102