Resist Development Process For Sub-0.15/spl mu/m Lithography By KrF Imaging
Fabrication of 1Gbit DRAM requires sub-0.15pm lithography. Improvement in process latitude is essential even in resist development process in order to resolve sub-0.15pm resist patterns, which are the practical resolution limit in a conventional KrF imaging. It has been reported that effects of surf...
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| creator | Matsunaga, K. Kawamura, D. Mimotogi, S. Azuma, T. Onishi, Y. |
| description | Fabrication of 1Gbit DRAM requires sub-0.15pm lithography. Improvement in process latitude is essential even in resist development process in order to resolve sub-0.15pm resist patterns, which are the practical resolution limit in a conventional KrF imaging. It has been reported that effects of surfactants in the resist development process were investigated for conventional novolalk resists.[1][2] In this paper, we experimentally study the effects of the resist development conditions and the surfactants on the process latitude for chemically amplified resists. |
| doi_str_mv | 10.1109/IMNC.1998.730101 |
| format | Conference Proceeding |
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| ispartof | Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135), 1998, p.319-320 |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Chemical processes Data analysis High-resolution imaging Image resolution Lithography Resists |
| title | Resist Development Process For Sub-0.15/spl mu/m Lithography By KrF Imaging |
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