Resist Development Process For Sub-0.15/spl mu/m Lithography By KrF Imaging

Fabrication of 1Gbit DRAM requires sub-0.15pm lithography. Improvement in process latitude is essential even in resist development process in order to resolve sub-0.15pm resist patterns, which are the practical resolution limit in a conventional KrF imaging. It has been reported that effects of surfactants in the resist development process were investigated for conventional novolalk resists.[1][2] In this paper, we experimentally study the effects of the resist development conditions and the surfactants on the process latitude for chemically amplified resists.