Analytical Model and Characteristics for High-Voltage Controllable C-SenseFET

An analytical model is proposed to describe the on-state current in linear and saturation regions for the high-voltage C-SenseFET. As C-SenseFET is an important sensing and charging integrated device, two key parameters--sensing ratio K and charging swing factor α are analyzed in detail and some opt...

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Veröffentlicht in:	IEEE transactions on power electronics 2016-06, Vol.31 (6), p.4499-4508
Hauptverfasser:	Li, Zehong, Liu, Yong, Wu, Ji, Li, Zhaoji, Lai, Yaming, Song, Xunyi, Sun, Chongwen, Ren, Min, Zhang, Jinping, Gao, Wei, Zhang, Bo
Format:	Artikel
Sprache:	eng
Schlagworte:	analytical model Analytical models C-SenseFET Charging charging swing factor Computer simulation Detection Devices Electric currents Electric fields Electric power JFETs Junctions Mathematical analysis Mathematical model Mathematical models Optimization Saturation sensing ratio Sensors Simulation
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Beschreibung
Zusammenfassung:	An analytical model is proposed to describe the on-state current in linear and saturation regions for the high-voltage C-SenseFET. As C-SenseFET is an important sensing and charging integrated device, two key parameters--sensing ratio K and charging swing factor α are analyzed in detail and some optimizational structures are provided. For the practical application of C-SenseFET, K and α are required to satisfy the conditions of 0.001
ISSN:	0885-8993 1941-0107
DOI:	10.1109/TPEL.2015.2473682