Carrizo: A High Performance, Energy Efficient 28 nm APU

AMD's 6th generation "Carrizo" APU, targeted at 12-35 W mobile computing form factors, contains 3.1 billion transistors, occupies 250.04 mm 2 and is implemented in a 28 nm HKMG planar dual-oxide FET technology with 12 metal layers. The design achieves a 29% improvement in transistor d...

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Veröffentlicht in:IEEE journal of solid-state circuits 2016-01, Vol.51 (1), p.105-116
Hauptverfasser: Munger, Benjamin, Akeson, David, Arekapudi, Srikanth, Burd, Tom, Fair, Harry R., Farrell, Jim, Johnson, Dave, Krishnan, Guhan, McIntyre, Hugh, McLellan, Edward, Naffziger, Samuel, Schreiber, Russell, Sundaram, Sriram, White, Jonathan, Wilcox, Kathryn
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Sprache:eng
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Zusammenfassung:AMD's 6th generation "Carrizo" APU, targeted at 12-35 W mobile computing form factors, contains 3.1 billion transistors, occupies 250.04 mm 2 and is implemented in a 28 nm HKMG planar dual-oxide FET technology with 12 metal layers. The design achieves a 29% improvement in transistor density compared to the 5th generation "Kaveri" APU, also a 28 nm design, and implements several power management features resulting in area and power improvements similar to a technology shrink. Increased power density makes meeting the thermal limits required for reliability and power distribution to the APU's processors substantial design challenges. Pre-silicon thermal analysis is used to understand and take advantage of thermal gradients. Adaptive voltage-frequency scaling in the processor core as well as wordline and bitline assist techniques in the L2 cache enable lower minimum voltage requirements.
ISSN:0018-9200
1558-173X
DOI:10.1109/JSSC.2015.2464688