Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies-Part II: DC and AC Model Description

A detailed presentation of the latest version of Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of ultrathin body and BOX fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In t...

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Veröffentlicht in:	IEEE transactions on electron devices 2015-09, Vol.62 (9), p.2760-2768
Hauptverfasser:	Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud
Format:	Artikel
Sprache:	eng
Schlagworte:	Analytical models compact modeling Electric potential Electrostatics fully depleted silicon on insulator (FDSOI) independent double gate (IDG) Logic gates Mathematical model Semiconductor device modeling SPICE Transistors ultrathin body and buried oxide (UTBB)
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Beschreibung
Zusammenfassung:	A detailed presentation of the latest version of Leti-UTSOI compact model is provided. Leti-UTSOI2 is the first available model able to describe the behavior of ultrathin body and BOX fully depleted silicon-on-insulator transistors in all bias configurations, including strong forward back bias. In this paper, compact modeling of intrinsic currents and charges, including all physical effects required to describe decananometer transistors, is detailed. This model is valid for all independent double-gate architectures, very accurate and feature excellent predictability over technological parameters.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2015.2458336