Effects of Channel Width on High-Frequency Characteristics of Trigate Poly-Si Thin-Film Transistors Fabricated by Microwave Annealing

In this paper, the high-frequency performance of trigate polycrystalline silicon thin-film transistors (poly-Si TFTs) is analyzed using low-temperature microwave annealing. The variation of the cutoff frequency and the maximum oscillation frequency with the width of the channel wire is investigated....

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	IEEE transactions on electron devices 2015-09, Vol.62 (9), p.2883-2887
Hauptverfasser:	Hu, Hsin-Hui, Wang, Kai-Min
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Capacitance Gate geometry Logic gates microwave annealing (MWA) Microwave transistors polycrystalline silicon thin-film transistors (poly-Si TFTs) Radio frequency radio frequency (RF) Thin film transistors Wires
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!