Effects of Channel Width on High-Frequency Characteristics of Trigate Poly-Si Thin-Film Transistors Fabricated by Microwave Annealing

In this paper, the high-frequency performance of trigate polycrystalline silicon thin-film transistors (poly-Si TFTs) is analyzed using low-temperature microwave annealing. The variation of the cutoff frequency and the maximum oscillation frequency with the width of the channel wire is investigated. A poly-Si TFT with a short channel and a narrow channel wire, annealed using microwave, has a high driving current, a good gate controllability, and a better high-frequency performance than one that annealed by rapid thermal annealing.