Three-Dimensional Integration of Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical Hybrid Reconfigurable Circuits
Complementary-metal-oxide-semiconductor(CMOS) and nanoelectromechanical (NEM) hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) integration process. In addition, their operation is confirmed experimentally. For the fabrication of the 3D CMOS-NEM hybrid re...
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Veröffentlicht in: | IEEE electron device letters 2015-09, Vol.36 (9), p.887-889 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Complementary-metal-oxide-semiconductor(CMOS) and nanoelectromechanical (NEM) hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) integration process. In addition, their operation is confirmed experimentally. For the fabrication of the 3D CMOS-NEM hybrid reconfigurable circuits, only the standard CMOS baseline process has been used except for the hydrofluoric acid vapor etch to release the NEM structures and focused-ion-beam patterning to define small patterns. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2015.2455556 |