A proposal for improving cutoff-frequency breakdown-voltage products of HEMTs

A proposal for improving cutoff-frequency breakdown-voltage products of HEMTs

The breakdown-voltage cutoff-frequency product gives a figure of merit of FETs/HEMTs. This paper studies it from a view point of energy-bandgaps of channel materials, and proposes a bandgap engineered device for improving the product. V/sub B//spl middot/f/sub T/ of an InGaAs HEMT can be doubled by...

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Hauptverfasser: Tsukurimichi, H., Hashimoto, S., Iiyama, K., Takamiya, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
HEMTs
Indium gallium arsenide
Indium phosphide
Lattices
MODFETs
Photonic band gap
Power engineering and energy
Proposals
Semiconductor process modeling
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Beschreibung
Zusammenfassung:The breakdown-voltage cutoff-frequency product gives a figure of merit of FETs/HEMTs. This paper studies it from a view point of energy-bandgaps of channel materials, and proposes a bandgap engineered device for improving the product. V/sub B//spl middot/f/sub T/ of an InGaAs HEMT can be doubled by introducing a (InGaAs to InP) graded composition zone.
ISSN:1092-8669
DOI:10.1109/ICIPRM.1998.712723