Fabrication of 1.55 /spl mu/m oxidized VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors

We present the fabrication of 1.55 /spl mu/m multi-quantum well vertical cavity surface emitting lasers (VCSEL) grown by gas source MBE on InP substrate. We use a combination of lattice-matched InP/InGaAsP and GaAs/GaAlAs metamorphic reflectors with high reflectivities. Room temperature operation in...

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Hauptverfasser:	Starck, C., Plais, A., Derouin, E., Pinquier, A., Gaborit, F., Fortin, C., Goldstein, L., Boucart, J., Salet, P., Carpentier, D., Jacquet, J.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Gallium arsenide Gas lasers Indium phosphide Laser modes Optical device fabrication Oxidation Reflectivity Surface emitting lasers Temperature Vertical cavity surface emitting lasers
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Zusammenfassung:	We present the fabrication of 1.55 /spl mu/m multi-quantum well vertical cavity surface emitting lasers (VCSEL) grown by gas source MBE on InP substrate. We use a combination of lattice-matched InP/InGaAsP and GaAs/GaAlAs metamorphic reflectors with high reflectivities. Room temperature operation in pulsed mode is achieved. We also demonstrate that selective wet oxidation of GaAlAs can be applied to metamorphic material.
ISSN:	1092-8669
DOI:	10.1109/ICIPRM.1998.712479