Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 /spl mu/m AlGaInAs/InP quantum well lasers

Studies of the effects of multi-stack multiquantum barrier on the properties of 1.3 /spl mu/m AlGaInAs/InP quantum well lasers

The optical confinement factor, far-field angle, and threshold current of 1.3 /spl mu/m AlGaInAs/InP separate confinement heterostructure (SCH) laser with two-stack AlInAs-(AlGa)InAs multiquantum barriers (MQB) are theoretically studied. The internal quantum efficiency for the laser with MQB is decr...

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Bibliographische Detailangaben
Hauptverfasser: Jen-Wei Pan, Jen-Inn Chyi, Yuan-Kuang Tu, Jy-Wang Liaw
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Artificial intelligence
Charge carrier processes
Electron mobility
Electron optics
Indium phosphide
Laser theory
Quantum well lasers
Reflectivity
Temperature distribution
Threshold current
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Zusammenfassung:The optical confinement factor, far-field angle, and threshold current of 1.3 /spl mu/m AlGaInAs/InP separate confinement heterostructure (SCH) laser with two-stack AlInAs-(AlGa)InAs multiquantum barriers (MQB) are theoretically studied. The internal quantum efficiency for the laser with MQB is decreased by 13% in contrast to 24% for the laser without MQB in the temperature range of 298-348 K. The characteristic temperature can be improved by 10 K. Experimental results for the 1.3 /spl mu/m AlGaInAs/InP laser with MQB are also presented and compared.
DOI:10.1109/ISCS.1998.711671