Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12/spl times/10/sup 11/ cm/sup -2/. At the maximum 2D-carrier densi...

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Hauptverfasser: Jones, E.D., Blount, M., Chow, W., Hou, H., Simmons, J.A.
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Sprache:eng
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Extraterrestrial measurements
Fiber lasers
Gallium arsenide
Laser transitions
Magnetic field measurement
Optical fibers
Photonic band gap
Shape
Substrates
Temperature measurement
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creator Jones, E.D.
Blount, M.
Chow, W.
Hou, H.
Simmons, J.A.
description Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12/spl times/10/sup 11/ cm/sup -2/. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.
doi_str_mv 10.1109/ISCS.1998.711611
format Conference Proceeding
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subjects Extraterrestrial measurements
Fiber lasers
Gallium arsenide
Laser transitions
Magnetic field measurement
Optical fibers
Photonic band gap
Shape
Substrates
Temperature measurement
title Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells
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