Bandgap renormalization studies of n-type GaAs/AlGaAs single quantum wells

Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12/spl times/10/sup 11/ cm/sup -2/. At the maximum 2D-carrier densi...

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Bibliographische Detailangaben
Hauptverfasser:	Jones, E.D., Blount, M., Chow, W., Hou, H., Simmons, J.A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Extraterrestrial measurements Fiber lasers Gallium arsenide Laser transitions Magnetic field measurement Optical fibers Photonic band gap Shape Substrates Temperature measurement
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Zusammenfassung:	Bandgap energy renormalization due to many body effects has been studied in a series of n-type 8-nm-wide GaAs/AlGaAs single quantum wells using magnetoluminescence spectroscopy at 1.4 K. The 2D-carrier densities varied between 1 and 12/spl times/10/sup 11/ cm/sup -2/. At the maximum 2D-carrier density, the bandgap energy reduction compared to an undoped specimen was found to be about 34 meV.
DOI:	10.1109/ISCS.1998.711611