GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

GaN/GaAs(111)B grown by molecular beam epitaxy using hydrazine

Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700/...

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Hauptverfasser: Antipov, V.G., Guriev, A.I., Elyukhin, V.A., Faleev, N.N., Kudriavtsev, Yu.A., Lebedev, A.B., Shubina, T.V., Zubrilov, A.S., Nikishin, S.A., Temkin, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Gallium arsenide
Gallium nitride
Molecular beam epitaxial growth
Nitrogen
Propellants
Substrates
Surface reconstruction
Temperature distribution
Temperature measurement
USA Councils
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Beschreibung
Zusammenfassung:Layers of hexagonal GaN were grown on (111)B GaAs substrates by gas source molecular beam epitaxy (GSMBE) using hydrazine as a source of active nitrogen. Nitridation of an AlAs buffer layer was shown to produce a flat layer of AlN. GaN films grown on the AlN surface at growth temperatures above 700/spl deg/C exhibited quasi two-dimensional growth. Photoluminescence spectra of such GaN layers show narrow band-edge emission and no "yellow" defect band.
DOI:10.1109/ISCS.1998.711533