Thickness-Dependent Performance of a Free-Standing Membrane LED

Thickness-Dependent Performance of a Free-Standing Membrane LED

We propose a free-standing membrane light-emitting diode (LED) on a GaN-on-silicon platform. Finite-difference time-domain (FDTD) simulation is used to investigate thickness-dependent performance of a free-standing membrane LED. The simulation results show that the light extraction efficiency is inc...

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Veröffentlicht in:IEEE photonics journal 2015-06, Vol.7 (3), p.1-7
Hauptverfasser: Li, Xin, Bai, Dan, Shi, Zheng, Zhu, Gangyi, Zhang, Miao, Cao, Ziping, Zhu, Hongbo, Grunberg, Peter, Wang, Yongjin
Format: Artikel
Sprache:eng
Schlagworte:
Epitaxial growth
Gallium nitride
Light emitting diodes
Optical films
Silicon
Substrates
Thin film devices and applications
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Zusammenfassung:We propose a free-standing membrane light-emitting diode (LED) on a GaN-on-silicon platform. Finite-difference time-domain (FDTD) simulation is used to investigate thickness-dependent performance of a free-standing membrane LED. The simulation results show that the light extraction efficiency is increased, and a directed emission pattern is obtained in free-standing membrane LEDs, which are experimentally implemented by removing the silicon substrate and back wafer thinning of the epitaxial layer. The light extraction efficiency and current-voltage (I-V) performance of membrane LEDs is increased in comparison with LEDs with silicon substrate.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2015.2438438