Multilayered ALD HfAlOx and HfO2 for High-Quality Gate Stacks

Multilayered ALD HfAlOx and HfO2 for High-Quality Gate Stacks

This paper has demonstrated a high-quality HfO 2 -based gate stack by depositing atomic-layer-deposited HfAlO x along with HfO 2 in a layered structure. In order to get a multifold enhancement of the gate stack quality, both Al percentage and distribution were observed by varying the HfAlO x layer t...

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Veröffentlicht in:IEEE transactions on device and materials reliability 2015-06, Vol.15 (2), p.229-235
Hauptverfasser: Bhuyian, Md Nasir Uddin, Misra, Durgamadhab
Format: Magazinearticle
Sprache:eng
Schlagworte:
Annealing
Dielectrics
Equivalent oxide thickness (EOT)
Hafnium compounds
HfAlOx
interface state density (Dit)
Leakage currents
Logic gates
Silicon
Stress
stress induced flat-band voltage shift (VFB)
stress induced leakage current (SILC)
time dependent dielectric breakdown (TDDB)
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Zusammenfassung:This paper has demonstrated a high-quality HfO 2 -based gate stack by depositing atomic-layer-deposited HfAlO x along with HfO 2 in a layered structure. In order to get a multifold enhancement of the gate stack quality, both Al percentage and distribution were observed by varying the HfAlO x layer thickness and its location in the gate stack. It was found that
ISSN:1530-4388
1558-2574
DOI:10.1109/TDMR.2015.2424151