FMR and magnetization study of NiFe/Ag/CoNi trilayer film

The polycrystalline FeNi/Ag/CoNi asymmetric trilayer films were prepared by UHV magnetron sputtering on silicon. In plane magnetization measurements showed double-step hysteresis loops. Magnetoresistance (MR) measurements revealed a giant magnetoresistance effect with magnitudes in the 0.15-0.29% ra...

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Veröffentlicht in:IEEE transactions on magnetics 1998-07, Vol.34 (4), p.846-848
Hauptverfasser: Koymen, A.R., Tagirov, L.R., Gilmutdinov, R.T., Topacli, C., Birlikseven, C., Durusoy, H.Z., Aktas, B.
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container_end_page 848
container_issue 4
container_start_page 846
container_title IEEE transactions on magnetics
container_volume 34
creator Koymen, A.R.
Tagirov, L.R.
Gilmutdinov, R.T.
Topacli, C.
Birlikseven, C.
Durusoy, H.Z.
Aktas, B.
description The polycrystalline FeNi/Ag/CoNi asymmetric trilayer films were prepared by UHV magnetron sputtering on silicon. In plane magnetization measurements showed double-step hysteresis loops. Magnetoresistance (MR) measurements revealed a giant magnetoresistance effect with magnitudes in the 0.15-0.29% range at room temperature. The saturation magnetizations and the interaction between layers were studied by ferromagnetic resonance and revealed an undistinguishably weak interlayer coupling from out-of-plane geometry of measurements. The MR data are interpreted based on the incomplete domain alignment model for polycrystalline magnetic films.
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subjects Couplings
Geometry
Giant magnetoresistance
Magnetic hysteresis
Magnetic resonance
Saturation magnetization
Semiconductor films
Silicon
Sputtering
Temperature distribution
title FMR and magnetization study of NiFe/Ag/CoNi trilayer film
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