FMR and magnetization study of NiFe/Ag/CoNi trilayer film

FMR and magnetization study of NiFe/Ag/CoNi trilayer film

The polycrystalline FeNi/Ag/CoNi asymmetric trilayer films were prepared by UHV magnetron sputtering on silicon. In plane magnetization measurements showed double-step hysteresis loops. Magnetoresistance (MR) measurements revealed a giant magnetoresistance effect with magnitudes in the 0.15-0.29% ra...

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Veröffentlicht in:IEEE transactions on magnetics 1998-07, Vol.34 (4), p.846-848
Hauptverfasser: Koymen, A.R., Tagirov, L.R., Gilmutdinov, R.T., Topacli, C., Birlikseven, C., Durusoy, H.Z., Aktas, B.
Format: Artikel
Sprache:eng
Schlagworte:
Couplings
Geometry
Giant magnetoresistance
Magnetic hysteresis
Magnetic resonance
Saturation magnetization
Semiconductor films
Silicon
Sputtering
Temperature distribution
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Zusammenfassung:The polycrystalline FeNi/Ag/CoNi asymmetric trilayer films were prepared by UHV magnetron sputtering on silicon. In plane magnetization measurements showed double-step hysteresis loops. Magnetoresistance (MR) measurements revealed a giant magnetoresistance effect with magnitudes in the 0.15-0.29% range at room temperature. The saturation magnetizations and the interaction between layers were studied by ferromagnetic resonance and revealed an undistinguishably weak interlayer coupling from out-of-plane geometry of measurements. The MR data are interpreted based on the incomplete domain alignment model for polycrystalline magnetic films.
ISSN:0018-9464
1941-0069
DOI:10.1109/20.706282