GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plas...

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Veröffentlicht in:	IEEE electron device letters 2015-05, Vol.36 (5), p.448-450
Hauptverfasser:	Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Dielectrics Gallium nitride Leakage currents Logic gates Silicon nitride
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