GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

GaN-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition SiNx as Gate Dielectric

In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plas...

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Veröffentlicht in:IEEE electron device letters 2015-05, Vol.36 (5), p.448-450
Hauptverfasser: Mengyuan Hua, Cheng Liu, Shu Yang, Shenghou Liu, Kai Fu, Zhihua Dong, Yong Cai, Baoshun Zhang, Chen, Kevin J.
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium nitride
Dielectrics
Gallium nitride
Leakage currents
Logic gates
Silicon nitride
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Zusammenfassung:In this letter, silicon nitride (SiNx) film deposited at 780 °C by low-pressure chemical vapor deposition (LPCVD) was employed as gate dielectric for GaN-based metal-insulator-semiconductor high-electron-mobility transistors. The LPCVD-SiN x exhibit improved gate dielectric performance than the plasma enhanced chemical vapor deposition-SiN x , including smaller forward and reverse gate leakage, and higher forward gate breakdown voltage.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2409878