A 128/spl times/128 imaging array using lateral bipolar phototransistors in a standard CMOS process [fingerprint detection]

A 128/spl times/128 imaging array using lateral bipolar phototransistors in a standard CMOS process [fingerprint detection]

A 128/spl times/128 element photodetector array has been fabricated using lateral bipolar phototransistors in a standard 1.2 /spl mu/m digital CMOS process. One-bit image processing for the array is accomplished through the use of a current mode comparator. Images focused on to the photodetector arr...

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Bibliographische Detailangaben
Hauptverfasser: Sandage, R.W., Connelly, J.A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge transfer
CMOS process
CMOS technology
Fingerprint recognition
Image processing
Optical arrays
Optical imaging
Photodetectors
Photodiodes
Phototransistors
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Beschreibung
Zusammenfassung:A 128/spl times/128 element photodetector array has been fabricated using lateral bipolar phototransistors in a standard 1.2 /spl mu/m digital CMOS process. One-bit image processing for the array is accomplished through the use of a current mode comparator. Images focused on to the photodetector array have been successfully captured and are presented in this paper.
DOI:10.1109/ISCAS.1998.705442