Aluminum dual damascene interconnects with low-/spl kappa/ intra/inter-level dielectric for reduced capacitance and low cost

Aluminum dual damascene interconnects using a low dielectric constant (low-/spl kappa/) material as intra/inter level dielectric have been successfully demonstrated. The low-/spl kappa/ material has led to significant reduction in both intra-level and inter-level capacitance in the dual damascene Al...

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Hauptverfasser:	Zhao, B., Feiler, D., Liu, Q.Z., Nguyen, C.H., Brongo, M., Kuei, J., Ramanathan, V., Wu, J., Zhang, H., Rumer, M., Biberger, M.A., Sachan, V., James, D.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Aluminum Application specific integrated circuits Capacitance Costs Dielectric materials Integrated circuit interconnections Integrated circuit noise Integrated circuit reliability Sputter etching Wiring
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Beschreibung
Zusammenfassung:	Aluminum dual damascene interconnects using a low dielectric constant (low-/spl kappa/) material as intra/inter level dielectric have been successfully demonstrated. The low-/spl kappa/ material has led to significant reduction in both intra-level and inter-level capacitance in the dual damascene Al interconnect structures. In addition, low via resistance and good interconnect reliability characteristics have been observed in the low-cost Al/low-/spl kappa/ dual damascene interconnects.
DOI:	10.1109/IITC.1998.704775