GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity
In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) transparent conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n + -InGaN contact layer. Ultralow forward voltage (V f ) of 2.86 V at 20 mA was obtained, attributing...
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| Veröffentlicht in: | IEEE electron device letters 2015-04, Vol.36 (4), p.372-374 |
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| container_title | IEEE electron device letters |
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| creator | Yang, Jingchuan Pei, Yanli Fan, Bingfeng Huang, Shanjin Chen, Zimin Tong, Cunsheng Luo, Hongtai Liang, Jun Wang, Gang |
| description | In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) transparent conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n + -InGaN contact layer. Ultralow forward voltage (V f ) of 2.86 V at 20 mA was obtained, attributing to the epitaxial-like excellent interface between AZO/n + -InGaN contact layer confirmed by high-resolution transmission electron microscopy. The most worthy is that the V f uniformity can be demonstrated on a 2-in wafer with a standard deviation of 0.02 V. Combined with the excellent light extraction, the MOCVD grown AZO-TCL is expected to be an alternative of tin-doped indium oxide in GaN-based LEDs for mass production. |
| doi_str_mv | 10.1109/LED.2015.2404137 |
| format | Article |
| fullrecord | <record><control><sourceid>crossref_RIE</sourceid><recordid>TN_cdi_ieee_primary_7042279</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>7042279</ieee_id><sourcerecordid>10_1109_LED_2015_2404137</sourcerecordid><originalsourceid>FETCH-LOGICAL-c263t-d2009002cd61b7285eb59c15db00cc7a3ec571032b2af7457236412be6e9e14a3</originalsourceid><addsrcrecordid>eNo9kM1q20AUhYfSQt00-0I39wXk3vnTRN2lduIE3HoTJ9CNGI2u7SnyjBhNavQyedYoJGR14HC-s_gY-8ZxzjlWP9ZXy7lArudCoeLSfGAzrvVFgbqUH9kMjeKF5Fh-Zl-G4R8iV8qoGXta2T_FLztQC9PDAA8-H-CyK5axn6q_YQN3yYaht4lChkUM7aPL_j_B2o6UYJXiKUAzwm_KtoNN2tvgHSwOdPRuKu5tHxMsqY-Dzz6Gn7DtcrJdPMF1TCebWriPXbZ7AhtauPH7QzfCNvhdTEefx6_s0852A52_5RnbXl_dLW6K9WZ1u7hcF06UMhetQKwQhWtL3hhxoanRleO6bRCdM1aS04ajFI2wO6O0EbJUXDRUUkVcWXnG8PXXpTgMiXZ1n_zRprHmWL_4rSc79Yvf-s3vhHx_RTwRvc8NKiFMJZ8B2pV3mg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity</title><source>IEEE Electronic Library (IEL)</source><creator>Yang, Jingchuan ; Pei, Yanli ; Fan, Bingfeng ; Huang, Shanjin ; Chen, Zimin ; Tong, Cunsheng ; Luo, Hongtai ; Liang, Jun ; Wang, Gang</creator><creatorcontrib>Yang, Jingchuan ; Pei, Yanli ; Fan, Bingfeng ; Huang, Shanjin ; Chen, Zimin ; Tong, Cunsheng ; Luo, Hongtai ; Liang, Jun ; Wang, Gang</creatorcontrib><description>In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) transparent conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n + -InGaN contact layer. Ultralow forward voltage (V f ) of 2.86 V at 20 mA was obtained, attributing to the epitaxial-like excellent interface between AZO/n + -InGaN contact layer confirmed by high-resolution transmission electron microscopy. The most worthy is that the V f uniformity can be demonstrated on a 2-in wafer with a standard deviation of 0.02 V. Combined with the excellent light extraction, the MOCVD grown AZO-TCL is expected to be an alternative of tin-doped indium oxide in GaN-based LEDs for mass production.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2015.2404137</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Aluminum-doped Zinc oxide (AZO) ; Gallium nitride ; Indium tin oxide ; LEDs ; Light emitting diodes ; MOCVD ; Power generation ; Quantum well devices ; Ultra-low forward voltage (Vf) ; Zinc oxide</subject><ispartof>IEEE electron device letters, 2015-04, Vol.36 (4), p.372-374</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c263t-d2009002cd61b7285eb59c15db00cc7a3ec571032b2af7457236412be6e9e14a3</citedby><cites>FETCH-LOGICAL-c263t-d2009002cd61b7285eb59c15db00cc7a3ec571032b2af7457236412be6e9e14a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7042279$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/7042279$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Yang, Jingchuan</creatorcontrib><creatorcontrib>Pei, Yanli</creatorcontrib><creatorcontrib>Fan, Bingfeng</creatorcontrib><creatorcontrib>Huang, Shanjin</creatorcontrib><creatorcontrib>Chen, Zimin</creatorcontrib><creatorcontrib>Tong, Cunsheng</creatorcontrib><creatorcontrib>Luo, Hongtai</creatorcontrib><creatorcontrib>Liang, Jun</creatorcontrib><creatorcontrib>Wang, Gang</creatorcontrib><title>GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) transparent conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n + -InGaN contact layer. Ultralow forward voltage (V f ) of 2.86 V at 20 mA was obtained, attributing to the epitaxial-like excellent interface between AZO/n + -InGaN contact layer confirmed by high-resolution transmission electron microscopy. The most worthy is that the V f uniformity can be demonstrated on a 2-in wafer with a standard deviation of 0.02 V. Combined with the excellent light extraction, the MOCVD grown AZO-TCL is expected to be an alternative of tin-doped indium oxide in GaN-based LEDs for mass production.</description><subject>Aluminum-doped Zinc oxide (AZO)</subject><subject>Gallium nitride</subject><subject>Indium tin oxide</subject><subject>LEDs</subject><subject>Light emitting diodes</subject><subject>MOCVD</subject><subject>Power generation</subject><subject>Quantum well devices</subject><subject>Ultra-low forward voltage (Vf)</subject><subject>Zinc oxide</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kM1q20AUhYfSQt00-0I39wXk3vnTRN2lduIE3HoTJ9CNGI2u7SnyjBhNavQyedYoJGR14HC-s_gY-8ZxzjlWP9ZXy7lArudCoeLSfGAzrvVFgbqUH9kMjeKF5Fh-Zl-G4R8iV8qoGXta2T_FLztQC9PDAA8-H-CyK5axn6q_YQN3yYaht4lChkUM7aPL_j_B2o6UYJXiKUAzwm_KtoNN2tvgHSwOdPRuKu5tHxMsqY-Dzz6Gn7DtcrJdPMF1TCebWriPXbZ7AhtauPH7QzfCNvhdTEefx6_s0852A52_5RnbXl_dLW6K9WZ1u7hcF06UMhetQKwQhWtL3hhxoanRleO6bRCdM1aS04ajFI2wO6O0EbJUXDRUUkVcWXnG8PXXpTgMiXZ1n_zRprHmWL_4rSc79Yvf-s3vhHx_RTwRvc8NKiFMJZ8B2pV3mg</recordid><startdate>201504</startdate><enddate>201504</enddate><creator>Yang, Jingchuan</creator><creator>Pei, Yanli</creator><creator>Fan, Bingfeng</creator><creator>Huang, Shanjin</creator><creator>Chen, Zimin</creator><creator>Tong, Cunsheng</creator><creator>Luo, Hongtai</creator><creator>Liang, Jun</creator><creator>Wang, Gang</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201504</creationdate><title>GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity</title><author>Yang, Jingchuan ; Pei, Yanli ; Fan, Bingfeng ; Huang, Shanjin ; Chen, Zimin ; Tong, Cunsheng ; Luo, Hongtai ; Liang, Jun ; Wang, Gang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c263t-d2009002cd61b7285eb59c15db00cc7a3ec571032b2af7457236412be6e9e14a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Aluminum-doped Zinc oxide (AZO)</topic><topic>Gallium nitride</topic><topic>Indium tin oxide</topic><topic>LEDs</topic><topic>Light emitting diodes</topic><topic>MOCVD</topic><topic>Power generation</topic><topic>Quantum well devices</topic><topic>Ultra-low forward voltage (Vf)</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yang, Jingchuan</creatorcontrib><creatorcontrib>Pei, Yanli</creatorcontrib><creatorcontrib>Fan, Bingfeng</creatorcontrib><creatorcontrib>Huang, Shanjin</creatorcontrib><creatorcontrib>Chen, Zimin</creatorcontrib><creatorcontrib>Tong, Cunsheng</creatorcontrib><creatorcontrib>Luo, Hongtai</creatorcontrib><creatorcontrib>Liang, Jun</creatorcontrib><creatorcontrib>Wang, Gang</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yang, Jingchuan</au><au>Pei, Yanli</au><au>Fan, Bingfeng</au><au>Huang, Shanjin</au><au>Chen, Zimin</au><au>Tong, Cunsheng</au><au>Luo, Hongtai</au><au>Liang, Jun</au><au>Wang, Gang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2015-04</date><risdate>2015</risdate><volume>36</volume><issue>4</issue><spage>372</spage><epage>374</epage><pages>372-374</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>In this letter, InGaN/GaN multiquantum well LEDs were fabricated with aluminum-doped zinc oxide (AZO) transparent conductive layer (TCL) grown by metal organic chemical vapor deposition (MOCVD) on n + -InGaN contact layer. Ultralow forward voltage (V f ) of 2.86 V at 20 mA was obtained, attributing to the epitaxial-like excellent interface between AZO/n + -InGaN contact layer confirmed by high-resolution transmission electron microscopy. The most worthy is that the V f uniformity can be demonstrated on a 2-in wafer with a standard deviation of 0.02 V. Combined with the excellent light extraction, the MOCVD grown AZO-TCL is expected to be an alternative of tin-doped indium oxide in GaN-based LEDs for mass production.</abstract><pub>IEEE</pub><doi>10.1109/LED.2015.2404137</doi><tpages>3</tpages></addata></record> |
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| subjects | Aluminum-doped Zinc oxide (AZO) Gallium nitride Indium tin oxide LEDs Light emitting diodes MOCVD Power generation Quantum well devices Ultra-low forward voltage (Vf) Zinc oxide |
| title | GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T09%3A22%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GaN-Based%20LEDs%20With%20Al-Doped%20ZnO%20Transparent%20Conductive%20Layer%20Grown%20by%20Metal%20Organic%20Chemical%20Vapor%20Deposition:%20Ultralow%20Forward%20Voltage%20and%20Highly%20Uniformity&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Yang,%20Jingchuan&rft.date=2015-04&rft.volume=36&rft.issue=4&rft.spage=372&rft.epage=374&rft.pages=372-374&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2015.2404137&rft_dat=%3Ccrossref_RIE%3E10_1109_LED_2015_2404137%3C/crossref_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=7042279&rfr_iscdi=true |