GaAsSb/InAlAs/InGaAs Tunnel Diodes for Millimeter Wave Detection in 220-330-GHz Band

We report on high-frequency performance and temperature stability of zero-bias GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection in 220-330-GHz band. The average voltage sensitivity of 1400 V/W has been achieved in 0.8 × 0.8μm 2 mesa devices at room temperature. Measured current-volta...

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Veröffentlicht in:	IEEE transactions on electron devices 2015-03, Vol.62 (3), p.1068-1071
Hauptverfasser:	Patrashin, Mikhail, Sekine, Norihiko, Kasamatsu, Akifumi, Watanabe, Issei, Hosako, Iwao, Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki
Format:	Artikel
Sprache:	eng
Schlagworte:	Backward diode Detectors Indium compounds millimeter wave and terahertz detectors Schottky diodes semiconductor nanostructures Sensitivity Temperature measurement Temperature sensors tunnel diode tunneling
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Beschreibung
Zusammenfassung:	We report on high-frequency performance and temperature stability of zero-bias GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection in 220-330-GHz band. The average voltage sensitivity of 1400 V/W has been achieved in 0.8 × 0.8μm 2 mesa devices at room temperature. Measured current-voltage characteristics revealed a superior temperature stability of the devices compared with Schottky barrier diodes. The expected sensitivity variations over a temperature range from T=17-300 K are 1.7 dB.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2015.2393358