Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET
We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET...
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| Veröffentlicht in: | IEEE electron device letters 2015-03, Vol.36 (3), p.220-222 |
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| container_title | IEEE electron device letters |
| container_volume | 36 |
| creator | Ryu, Min Woo Kim, Kwan Sung Lee, Jeong Seop Park, Kibog Yang, Jong-Ryul Han, Seong-Tae Kim, Kyung Rok |
| description | We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges ( |
| doi_str_mv | 10.1109/LED.2015.2394446 |
| format | Article |
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By designing FET with low-impedance ranges (<;1 kΩ) and integrating antennas with impedances of 50 and 100 Ω, we found that our low-impedance MOSFETs have the input impedance criterion of 50 Ω at 0.2 THz and the MOSFETs with thinner gate oxide show the highly enhanced plasmonic photoresponses at 50-Ω antenna by 325 times from the result of the detector without antenna.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2015.2394446</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>IEEE</publisher><subject>Antennas ; detector ; Detectors ; Impedance ; MOSFET ; photoresponse ; plasmonic ; Plasmons ; Silicon ; terahertz</subject><ispartof>IEEE electron device letters, 2015-03, Vol.36 (3), p.220-222</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c371t-264036cc8bfab54958a1d1e936de3449bfd105d34c373fc79323487e7787d503</citedby><cites>FETCH-LOGICAL-c371t-264036cc8bfab54958a1d1e936de3449bfd105d34c373fc79323487e7787d503</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/7017494$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids></links><search><creatorcontrib>Ryu, Min Woo</creatorcontrib><creatorcontrib>Kim, Kwan Sung</creatorcontrib><creatorcontrib>Lee, Jeong Seop</creatorcontrib><creatorcontrib>Park, Kibog</creatorcontrib><creatorcontrib>Yang, Jong-Ryul</creatorcontrib><creatorcontrib>Han, Seong-Tae</creatorcontrib><creatorcontrib>Kim, Kyung Rok</creatorcontrib><title>Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (<;1 kΩ) and integrating antennas with impedances of 50 and 100 Ω, we found that our low-impedance MOSFETs have the input impedance criterion of 50 Ω at 0.2 THz and the MOSFETs with thinner gate oxide show the highly enhanced plasmonic photoresponses at 50-Ω antenna by 325 times from the result of the detector without antenna.</description><subject>Antennas</subject><subject>detector</subject><subject>Detectors</subject><subject>Impedance</subject><subject>MOSFET</subject><subject>photoresponse</subject><subject>plasmonic</subject><subject>Plasmons</subject><subject>Silicon</subject><subject>terahertz</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNo9kFFLwzAUhYMoOKfvgi_5A51Jc9M0j3ObOqhssL2XNL1xlTUdaUT019u54dMHh3POw0fIPWcTzpl-LBbzScq4nKRCA0B2QUZcyjxhMhOXZMQU8ERwll2Tm77_YIwDKBiRuMbgutAab5Eu_O7IFn2knaPrvenbzjeWbj6rZIvB7DDEHzrHiDZ2gT6ZHmvaeTr1Eb03dDnwPZg4pEX3lSzbA9Z_z5tm39ih-LbaPC-2t-TKmX2Pd2eOyXZIZ69JsXpZzqZFYoXiMUkzYCKzNq-cqSRomRtec9Qiq1EA6MrVnMlawFAXziotUgG5QqVyVUsmxoSdbm3o-j6gKw-haU34Ljkrj9LKQVp5lFaepQ2Th9OkQcT_umJcgQbxC28-aIo</recordid><startdate>201503</startdate><enddate>201503</enddate><creator>Ryu, Min Woo</creator><creator>Kim, Kwan Sung</creator><creator>Lee, Jeong Seop</creator><creator>Park, Kibog</creator><creator>Yang, Jong-Ryul</creator><creator>Han, Seong-Tae</creator><creator>Kim, Kyung Rok</creator><general>IEEE</general><scope>97E</scope><scope>ESBDL</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201503</creationdate><title>Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET</title><author>Ryu, Min Woo ; Kim, Kwan Sung ; Lee, Jeong Seop ; Park, Kibog ; Yang, Jong-Ryul ; Han, Seong-Tae ; Kim, Kyung Rok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c371t-264036cc8bfab54958a1d1e936de3449bfd105d34c373fc79323487e7787d503</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Antennas</topic><topic>detector</topic><topic>Detectors</topic><topic>Impedance</topic><topic>MOSFET</topic><topic>photoresponse</topic><topic>plasmonic</topic><topic>Plasmons</topic><topic>Silicon</topic><topic>terahertz</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ryu, Min Woo</creatorcontrib><creatorcontrib>Kim, Kwan Sung</creatorcontrib><creatorcontrib>Lee, Jeong Seop</creatorcontrib><creatorcontrib>Park, Kibog</creatorcontrib><creatorcontrib>Yang, Jong-Ryul</creatorcontrib><creatorcontrib>Han, Seong-Tae</creatorcontrib><creatorcontrib>Kim, Kyung Rok</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE Open Access Journals</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ryu, Min Woo</au><au>Kim, Kwan Sung</au><au>Lee, Jeong Seop</au><au>Park, Kibog</au><au>Yang, Jong-Ryul</au><au>Han, Seong-Tae</au><au>Kim, Kyung Rok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2015-03</date><risdate>2015</risdate><volume>36</volume><issue>3</issue><spage>220</spage><epage>222</epage><pages>220-222</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (<;1 kΩ) and integrating antennas with impedances of 50 and 100 Ω, we found that our low-impedance MOSFETs have the input impedance criterion of 50 Ω at 0.2 THz and the MOSFETs with thinner gate oxide show the highly enhanced plasmonic photoresponses at 50-Ω antenna by 325 times from the result of the detector without antenna.</abstract><pub>IEEE</pub><doi>10.1109/LED.2015.2394446</doi><tpages>3</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Antennas detector Detectors Impedance MOSFET photoresponse plasmonic Plasmons Silicon terahertz |
| title | Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET |
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