Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET

Performance Enhancement of Plasmonic Sub-Terahertz Detector Based on Antenna Integrated Low-Impedance Silicon MOSFET

We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET...

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Veröffentlicht in:IEEE electron device letters 2015-03, Vol.36 (3), p.220-222
Hauptverfasser: Ryu, Min Woo, Kim, Kwan Sung, Lee, Jeong Seop, Park, Kibog, Yang, Jong-Ryul, Han, Seong-Tae, Kim, Kyung Rok
Format: Artikel
Sprache:eng
Schlagworte:
Antennas
detector
Detectors
Impedance
MOSFET
photoresponse
plasmonic
Plasmons
Silicon
terahertz
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Zusammenfassung:We demonstrate the performance enhancement of field-effect transistor (FET)-based plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance regime and report the experimental results of Si MOSFET impedance in THz regime using 0.2-THz measurement system. By designing FET with low-impedance ranges (
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2394446