Random Variation Analysis and Variation-Aware Design of Symmetric Tunnel Field-Effect Transistor

A variation-immune symmetric tunnel field-effect transistor (S-TFET) is proposed for the first time to implement bidirectional current flows (I ON = 3.6 μA/μm, IOFF = 23 pA/μm at VDD = 0.5 V) with the steep-switching feature of a subthreshold slope (SS)

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Bibliographische Detailangaben
Veröffentlicht in:	IEEE transactions on electron devices 2015-06, Vol.62 (6), p.1778-1783
Hauptverfasser:	Hyunjae Lee, Seulki Park, Youngtaek Lee, Hyohyun Nam, Changhwan Shin
Format:	Artikel
Sprache:	eng
Schlagworte:	CMOS Logic gates metal-oxide-semiconductor field-effect transistor (MOSFET) MOSFET Performance evaluation PIN photodiodes random variation Resource description framework steep switching tunnel field-effect transistor (TFET) Tunneling
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Beschreibung
Zusammenfassung:	A variation-immune symmetric tunnel field-effect transistor (S-TFET) is proposed for the first time to implement bidirectional current flows (I ON = 3.6 μA/μm, IOFF = 23 pA/μm at VDD = 0.5 V) with the steep-switching feature of a subthreshold slope (SS)
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2014.2365805