Modelling And Characterization Of High-speed GaAs And In/sub 0.35/Ga/sub 0.65/As Multiple-quantum-well Laser Diodes

Modelling and experimental results are presented, comparing the performance of vertically compact, high-speed GaAs and Ina j,GN As multiple-quantum-well lasers. Both devices' show superior performance, although the advantages of replacing the GaAs quantum wells with paeudomorphic InG&s quan...

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Hauptverfasser:	Schonfelder, A., Weisser, S., Esquivias, I., Ralston, J.D., Rosenzweig, J., Gallagher, D.F.G.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Charge carrier density Computer aided analysis Electrons Gallium arsenide Indium gallium arsenide Laser modes Quantum cascade lasers Quantum well devices Quantum well lasers Waveguide lasers
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Beschreibung
Zusammenfassung:	Modelling and experimental results are presented, comparing the performance of vertically compact, high-speed GaAs and Ina j,GN As multiple-quantum-well lasers. Both devices' show superior performance, although the advantages of replacing the GaAs quantum wells with paeudomorphic InG&s quantum wells are clearly demonstrated.
DOI:	10.1109/LEOS.1992.693907