Passively Q -Switched Erbium-Doped Fiber Laser Based on Few-Layer MoS2 Saturable Absorber
We demonstrate a passively Q-switched erbium-doped fiber laser (EDFL) based on few-layer MoS 2 as a saturable absorber (SA). Few-layer MoS 2 is prepared by the chemical vapor deposition method. The prepared MoS 2 is transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2...
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Veröffentlicht in: | IEEE photonics technology letters 2015-01, Vol.27 (1), p.69-72 |
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Sprache: | eng |
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Zusammenfassung: | We demonstrate a passively Q-switched erbium-doped fiber laser (EDFL) based on few-layer MoS 2 as a saturable absorber (SA). Few-layer MoS 2 is prepared by the chemical vapor deposition method. The prepared MoS 2 is transferred onto the end face of a fiber connector to form a fiber-compatible MoS 2 -based SA. The saturation intensity and modulation depth of the MoS 2 SA are measured to be 0.43 MW/cm 2 and 33.2%, respectively. The Q-switched EDFL has an all-fiber linear cavity with two fiber Bragg gratings as the end mirrors. By inserting the MoS 2 SA into the laser cavity, stable Q-switched operation is achieved at 1.55 μm. The laser has a pump threshold of 20.4 mW, a pulse repetition rate tunable from 10.6 to 173.1 kHz, and a minimum pulse duration of 1.66 μs. Our results show that few-layer MoS 2 is a promising SA for Q-switching laser operation. |
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ISSN: | 1041-1135 1941-0174 |
DOI: | 10.1109/LPT.2014.2361899 |