InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

In this letter, we present the first InGaAs gate-all-around (GAA) nanowire devices fabricated on 300mm Si substrates. For an L G of 60 nm an extrinsic g m of 1030 μS/μm at V ds = 0.5 V is achieved which is a 1.75× increase compared with the replacement fin FinFet process. This improvement is attributed to the elimination of Mg counterdoping in the GAA flow. Ultrascaled nanowires with diameters of 6 nm were demonstrated to show immunity to D it resulting in an SS SAT of 66 mV/decade and negligible drain-induced barrier lowering for 85-nm L G devices.