Large-Signal RF Performance of Nanocrystalline Diamond Coated AlGaN/GaN High Electron Mobility Transistors

In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to...

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Veröffentlicht in:IEEE electron device letters 2014-10, Vol.35 (10), p.1013-1015
Hauptverfasser: Meyer, David J., Koehler, Andrew D., Hobart, Karl D., Eddy, Charles R., Feygelson, Tatyana I., Anderson, Travis J., Roussos, Jason A., Tadjer, Marko J., Downey, Brian P., Katzer, D. Scott, Pate, Bradford B., Ancona, Mario G.
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Sprache:eng
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Zusammenfassung:In this split-wafer study, we have compared the dc, pulsed, small and large signal RF electrical performance of nanocrystalline diamond (NCD) coated AlGaN/GaN high electron mobility transistors (HEMTs) to reference devices with silicon nitride passivation only. The NCD-coated HEMTs were observed to outperform reference devices in transconductance, large-signal gain, output power density, and power-added efficiency at 4 GHz. The measured improvements were suspected to be related to reduced dispersion and lower source access resistance afforded by the NCD film.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2014.2345631