A novel resist and post-etch residue removal process using ozonated chemistries

A novel resist and post-etch residue removal process using ozonated chemistries

A novel, environmentally friendly process is successfully applied for the removal of photoresist and organic post-etch residues from silicon surfaces. The moist ozone gasphase process described, greatly increases the organic removal efficiency. Improved performance over traditional processes is due...

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Bibliographische Detailangaben
Hauptverfasser: De Gendt, S., Snee, P., Cornelissen, I., Lux, M., Vos, R., Mertens, P.W., Knotter, D.M., Heyns, M.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Artificial intelligence
Chemical technology
Chemistry
Cleaning
Containers
Plasma applications
Polymers
Resists
Scanning electron microscopy
Solvents
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Beschreibung
Zusammenfassung:A novel, environmentally friendly process is successfully applied for the removal of photoresist and organic post-etch residues from silicon surfaces. The moist ozone gasphase process described, greatly increases the organic removal efficiency. Improved performance over traditional processes is due to enhanced reactive ozone availability near the wafer surface. Additionally, OH radical scavengers such as acetic acid chemically enhance the process efficiency even further.
DOI:10.1109/VLSIT.1998.689243