Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications
A new, low temperature SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) MOCVD process exhibiting excellent run-to-run repeatability has been developed for high density FeRAM applications. 90% step coverage and good adhesion were achieved on feature sizes down to 0.5 μm on both Pt or SiO/sub 2/ surfaces. Postannea...
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| creator | Hintermaier, F. Hendrix, B. Desrochers, D. Roeder, J. Dehm, C. Fritsch, E. Honlein, W. Mazure, C. Nagel, N. Thwaite, P. Wendt, H. Baum, T.H. van Buskirk, P. Schumacher, M. Grossmann, M. Lohse, O. Waser, R. |
| description | A new, low temperature SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) MOCVD process exhibiting excellent run-to-run repeatability has been developed for high density FeRAM applications. 90% step coverage and good adhesion were achieved on feature sizes down to 0.5 μm on both Pt or SiO/sub 2/ surfaces. Postanneal process optimization resulted in an increase of remanent polarization of about 30%. Electrical characterization showed dielectric constants (ε) of ⩾200 and remanent polarization values (2Pr) of up to 23 μC/cm/sup 2/. Endurance has been demonstrated up to 10/sup 11/ cycles. |
| doi_str_mv | 10.1109/VLSIT.1998.689197 |
| format | Conference Proceeding |
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Postanneal process optimization resulted in an increase of remanent polarization of about 30%. Electrical characterization showed dielectric constants (ε) of ⩾200 and remanent polarization values (2Pr) of up to 23 μC/cm/sup 2/. Endurance has been demonstrated up to 10/sup 11/ cycles.</description><identifier>ISBN: 0780347706</identifier><identifier>ISBN: 9780780347700</identifier><identifier>DOI: 10.1109/VLSIT.1998.689197</identifier><language>eng</language><publisher>IEEE</publisher><subject>Adhesives ; Annealing ; Ferroelectric films ; Hysteresis ; MOCVD ; Nonvolatile memory ; Polarization ; Random access memory ; Temperature ; Transistors</subject><ispartof>1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. 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Endurance has been demonstrated up to 10/sup 11/ cycles.</description><subject>Adhesives</subject><subject>Annealing</subject><subject>Ferroelectric films</subject><subject>Hysteresis</subject><subject>MOCVD</subject><subject>Nonvolatile memory</subject><subject>Polarization</subject><subject>Random access memory</subject><subject>Temperature</subject><subject>Transistors</subject><isbn>0780347706</isbn><isbn>9780780347700</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1998</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNp9jssKgkAYRgci6PoAtfpfIJ1JS2fZlYLEKGkbU436hzoyY4RvX1TrzuYc-DYfIQNGLcYot0-74zayGOe-NfU5416DdKjnU8f1PDptkb4xd_rGnbjc522S7rUqpa5QGlAxHPUcbfO4wNiOxC_Cj7kNVYoFxJjlBhKtngVcagjCxWkJsdKQYpLCTRYGqxrW8jALQJRlhldRoSpMjzRjkRnZ_7lLhutVtNiMUEp5LjXmQtfn72fn7_gC_LtEtg</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Hintermaier, F.</creator><creator>Hendrix, B.</creator><creator>Desrochers, D.</creator><creator>Roeder, J.</creator><creator>Dehm, C.</creator><creator>Fritsch, E.</creator><creator>Honlein, W.</creator><creator>Mazure, C.</creator><creator>Nagel, N.</creator><creator>Thwaite, P.</creator><creator>Wendt, H.</creator><creator>Baum, T.H.</creator><creator>van Buskirk, P.</creator><creator>Schumacher, M.</creator><creator>Grossmann, M.</creator><creator>Lohse, O.</creator><creator>Waser, R.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope></search><sort><creationdate>1998</creationdate><title>Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications</title><author>Hintermaier, F. ; Hendrix, B. ; Desrochers, D. ; Roeder, J. ; Dehm, C. ; Fritsch, E. ; Honlein, W. ; Mazure, C. ; Nagel, N. ; Thwaite, P. ; Wendt, H. ; Baum, T.H. ; van Buskirk, P. ; Schumacher, M. ; Grossmann, M. ; Lohse, O. ; Waser, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_6891973</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1998</creationdate><topic>Adhesives</topic><topic>Annealing</topic><topic>Ferroelectric films</topic><topic>Hysteresis</topic><topic>MOCVD</topic><topic>Nonvolatile memory</topic><topic>Polarization</topic><topic>Random access memory</topic><topic>Temperature</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>Hintermaier, F.</creatorcontrib><creatorcontrib>Hendrix, B.</creatorcontrib><creatorcontrib>Desrochers, D.</creatorcontrib><creatorcontrib>Roeder, J.</creatorcontrib><creatorcontrib>Dehm, C.</creatorcontrib><creatorcontrib>Fritsch, E.</creatorcontrib><creatorcontrib>Honlein, W.</creatorcontrib><creatorcontrib>Mazure, C.</creatorcontrib><creatorcontrib>Nagel, N.</creatorcontrib><creatorcontrib>Thwaite, P.</creatorcontrib><creatorcontrib>Wendt, H.</creatorcontrib><creatorcontrib>Baum, T.H.</creatorcontrib><creatorcontrib>van Buskirk, P.</creatorcontrib><creatorcontrib>Schumacher, M.</creatorcontrib><creatorcontrib>Grossmann, M.</creatorcontrib><creatorcontrib>Lohse, O.</creatorcontrib><creatorcontrib>Waser, R.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Hintermaier, F.</au><au>Hendrix, B.</au><au>Desrochers, D.</au><au>Roeder, J.</au><au>Dehm, C.</au><au>Fritsch, E.</au><au>Honlein, W.</au><au>Mazure, C.</au><au>Nagel, N.</au><au>Thwaite, P.</au><au>Wendt, H.</au><au>Baum, T.H.</au><au>van Buskirk, P.</au><au>Schumacher, M.</au><au>Grossmann, M.</au><au>Lohse, O.</au><au>Waser, R.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications</atitle><btitle>1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)</btitle><stitle>VLSIT</stitle><date>1998</date><risdate>1998</risdate><spage>56</spage><epage>57</epage><pages>56-57</pages><isbn>0780347706</isbn><isbn>9780780347700</isbn><abstract>A new, low temperature SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) MOCVD process exhibiting excellent run-to-run repeatability has been developed for high density FeRAM applications. 90% step coverage and good adhesion were achieved on feature sizes down to 0.5 μm on both Pt or SiO/sub 2/ surfaces. Postanneal process optimization resulted in an increase of remanent polarization of about 30%. Electrical characterization showed dielectric constants (ε) of ⩾200 and remanent polarization values (2Pr) of up to 23 μC/cm/sup 2/. Endurance has been demonstrated up to 10/sup 11/ cycles.</abstract><pub>IEEE</pub><doi>10.1109/VLSIT.1998.689197</doi></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISBN: 0780347706 |
| ispartof | 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216), 1998, p.56-57 |
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| language | eng |
| recordid | cdi_ieee_primary_689197 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Adhesives Annealing Ferroelectric films Hysteresis MOCVD Nonvolatile memory Polarization Random access memory Temperature Transistors |
| title | Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications |
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