Properties of SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films grown by MOCVD for high density FeRAM applications

A new, low temperature SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) MOCVD process exhibiting excellent run-to-run repeatability has been developed for high density FeRAM applications. 90% step coverage and good adhesion were achieved on feature sizes down to 0.5 μm on both Pt or SiO/sub 2/ surfaces. Postannea...

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Hauptverfasser:	Hintermaier, F., Hendrix, B., Desrochers, D., Roeder, J., Dehm, C., Fritsch, E., Honlein, W., Mazure, C., Nagel, N., Thwaite, P., Wendt, H., Baum, T.H., van Buskirk, P., Schumacher, M., Grossmann, M., Lohse, O., Waser, R.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Adhesives Annealing Ferroelectric films Hysteresis MOCVD Nonvolatile memory Polarization Random access memory Temperature Transistors
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Beschreibung
Zusammenfassung:	A new, low temperature SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) MOCVD process exhibiting excellent run-to-run repeatability has been developed for high density FeRAM applications. 90% step coverage and good adhesion were achieved on feature sizes down to 0.5 μm on both Pt or SiO/sub 2/ surfaces. Postanneal process optimization resulted in an increase of remanent polarization of about 30%. Electrical characterization showed dielectric constants (ε) of ⩾200 and remanent polarization values (2Pr) of up to 23 μC/cm/sup 2/. Endurance has been demonstrated up to 10/sup 11/ cycles.
DOI:	10.1109/VLSIT.1998.689197