A Cu/low-/spl kappa/ dual damascene interconnect for high performance and low cost integrated circuits

Copper and a low dielectric constant (low-/spl kappa/) material have been successfully integrated in a dual damascene interconnect architecture. The low-/spl kappa/ material (/spl kappa/=2.2) was used as intra-level dielectric and inter-level dielectric, which has led to significant reduction in bot...

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Hauptverfasser: Zhao, B., Feiler, D., Ramanathan, V., Liu, Q.Z., Brongo, M., Wu, J., Zhang, H., Kuei, J.C., Young, D., Brown, J., Vo, C., Xia, W., Chu, C., Zhou, J., Nguyen, C., Tsau, L., Dornish, D., Camilletti, L., Ding, P., Lai, G., Chin, B., Johnson, M., Turner, J., Ritzdorf, T., Wu, G., Cook, L.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:Copper and a low dielectric constant (low-/spl kappa/) material have been successfully integrated in a dual damascene interconnect architecture. The low-/spl kappa/ material (/spl kappa/=2.2) was used as intra-level dielectric and inter-level dielectric, which has led to significant reduction in both intra-level and inter-level capacitance. In addition, low Cu wiring resistance and low Cu via resistance have been achieved in the dual damascene interconnect which offers process simplification and low cost.
DOI:10.1109/VLSIT.1998.689186