200-W Operation of an Ion-Implanted Vertical-Cavity Surface-Emitting Laser Array

We have demonstrated a high-power 980-nm vertical-cavity surface-emitting laser diode (VCSEL) array with ion-implanted current apertures. The device was characterized on an exclusively developed water-cooled heat sink for the VCSEL array. A peak output power of over 200 W has been achieved under qua...

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Veröffentlicht in:	IEEE journal of quantum electronics 2014-07, Vol.50 (7), p.510-514
Hauptverfasser:	Aoki, Yuta, Maeda, Junya, Yoshida, Harumasa, Miyamoto, Masahiro, Naito, Hideyuki, Higuchi, Akira, Torii, Kousuke, Nagakura, Takehito, Kageyama, Nobuto, Aoshima, Hiroki, Morita, Takenori
Format:	Artikel
Sprache:	eng
Schlagworte:	Arrays Devices Diode lasers Diodes Heat sinks Implantation Laser arrays Power generation Quantum electronics Vertical cavity surface emission lasers Vertical cavity surface emitting lasers Water temperature
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