200-W Operation of an Ion-Implanted Vertical-Cavity Surface-Emitting Laser Array

200-W Operation of an Ion-Implanted Vertical-Cavity Surface-Emitting Laser Array

We have demonstrated a high-power 980-nm vertical-cavity surface-emitting laser diode (VCSEL) array with ion-implanted current apertures. The device was characterized on an exclusively developed water-cooled heat sink for the VCSEL array. A peak output power of over 200 W has been achieved under qua...

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Veröffentlicht in:IEEE journal of quantum electronics 2014-07, Vol.50 (7), p.510-514
Hauptverfasser: Aoki, Yuta, Maeda, Junya, Yoshida, Harumasa, Miyamoto, Masahiro, Naito, Hideyuki, Higuchi, Akira, Torii, Kousuke, Nagakura, Takehito, Kageyama, Nobuto, Aoshima, Hiroki, Morita, Takenori
Format: Artikel
Sprache:eng
Schlagworte:
Arrays
Devices
Diode lasers
Diodes
Heat sinks
Implantation
Laser arrays
Power generation
Quantum electronics
Vertical cavity surface emission lasers
Vertical cavity surface emitting lasers
Water temperature
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Beschreibung
Zusammenfassung:We have demonstrated a high-power 980-nm vertical-cavity surface-emitting laser diode (VCSEL) array with ion-implanted current apertures. The device was characterized on an exclusively developed water-cooled heat sink for the VCSEL array. A peak output power of over 200 W has been achieved under quasi-continuous-wave operation at a cooling water temperature of 10 °C. The VCSEL array consists of 635 emitters, which were defined by proton implantation and arranged in a closest packed arrangement with 175-μm-spacing in 5 mm × 5 mm square. The results provide a chance to the next step for a higher-power VCSEL array.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2014.2323055