Enhancement in electroabsorption waveguide modulator slope efficiency at high optical power

An increase in transfer curve slope efficiency for a Franz-Keldysh effect InGaAsP-InP electroabsorption waveguide modulator is observed as the incident optical power is increased from 5.8 to 17 dBm. However, high-frequency RF measurements agree with the gain predicted from the low-power transfer cur...

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Veröffentlicht in:IEEE photonics technology letters 1998-07, Vol.10 (7), p.961-963
Hauptverfasser: Welstand, R.B., Pappert, S.A., Nichols, D.T., Lembo, L.J., Liu, Y.Z., Yu, P.K.L.
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Sprache:eng
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Zusammenfassung:An increase in transfer curve slope efficiency for a Franz-Keldysh effect InGaAsP-InP electroabsorption waveguide modulator is observed as the incident optical power is increased from 5.8 to 17 dBm. However, high-frequency RF measurements agree with the gain predicted from the low-power transfer curve at all optical powers. We attribute the increase in dc slope efficiency to a temperature-induced bandgap shrinkage of the electroabsorption material.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.681284