Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors
In this paper, the authors have shown that the Al-doping concentration of ZrO 2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO 2 suffers from early failures and uncontrolled leakage mechanisms. High Al-con...
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| creator | Seidel, K. Weinreich, W. Polakowski, P. Triyoso, D. H. Nolan, M. G. Yiang, K. Y. Chu, S. |
| description | In this paper, the authors have shown that the Al-doping concentration of ZrO 2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO 2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current. |
| doi_str_mv | 10.1109/IIRW.2013.6804190 |
| format | Conference Proceeding |
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H. ; Nolan, M. G. ; Yiang, K. Y. ; Chu, S.</creator><creatorcontrib>Seidel, K. ; Weinreich, W. ; Polakowski, P. ; Triyoso, D. H. ; Nolan, M. G. ; Yiang, K. Y. ; Chu, S.</creatorcontrib><description>In this paper, the authors have shown that the Al-doping concentration of ZrO 2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO 2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.</description><identifier>ISSN: 1930-8841</identifier><identifier>ISBN: 1479903507</identifier><identifier>ISBN: 9781479903504</identifier><identifier>EISSN: 2374-8036</identifier><identifier>EISBN: 9781479903528</identifier><identifier>EISBN: 1479903515</identifier><identifier>EISBN: 1479903523</identifier><identifier>EISBN: 9781479903511</identifier><identifier>DOI: 10.1109/IIRW.2013.6804190</identifier><language>eng</language><publisher>IEEE</publisher><subject>Capacitance ; Capacitors ; Leakage currents ; Materials ; MIM capacitors ; Semiconductor device reliability</subject><ispartof>2013 IEEE International Integrated Reliability Workshop Final Report, 2013, p.185-186</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6804190$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2051,27904,54899</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6804190$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Seidel, K.</creatorcontrib><creatorcontrib>Weinreich, W.</creatorcontrib><creatorcontrib>Polakowski, P.</creatorcontrib><creatorcontrib>Triyoso, D. 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It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.</description><subject>Capacitance</subject><subject>Capacitors</subject><subject>Leakage currents</subject><subject>Materials</subject><subject>MIM capacitors</subject><subject>Semiconductor device reliability</subject><issn>1930-8841</issn><issn>2374-8036</issn><isbn>1479903507</isbn><isbn>9781479903504</isbn><isbn>9781479903528</isbn><isbn>1479903515</isbn><isbn>1479903523</isbn><isbn>9781479903511</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2013</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNo1kEtqwzAURdUf1EmzgNKJNmD3PUmWpWEITWpICISWQifhRZZAxYmN7Q6yg467xK6klKSjC-fAGVzG7hEyRLCPZbl5ywSgzLQBhRYu2MQWBlVhLchcmEuWCFmo1IDUV2z0L6C4ZglaCakxCm_ZqO8_AP5CJmGLja8j7WIdhyN3zb6lLvbNgTeBt5-d5-_dWnA6VHxa_3x986ppfXWCq3LFHbXk4tB0_R27CVT3fnLeMXudP73MntPlelHOpss0YpEPaU65CQ4EBcqt0Q4qbaUgIEQvtVc6J1IVkMSgtAvogt0BOqG1soGCkWP2cOpG7_227eKeuuP2fIj8Bbc4T-E</recordid><startdate>201310</startdate><enddate>201310</enddate><creator>Seidel, K.</creator><creator>Weinreich, W.</creator><creator>Polakowski, P.</creator><creator>Triyoso, D. H.</creator><creator>Nolan, M. G.</creator><creator>Yiang, K. Y.</creator><creator>Chu, S.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>201310</creationdate><title>Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors</title><author>Seidel, K. ; Weinreich, W. ; Polakowski, P. ; Triyoso, D. H. ; Nolan, M. G. ; Yiang, K. 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Y.</creatorcontrib><creatorcontrib>Chu, S.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Seidel, K.</au><au>Weinreich, W.</au><au>Polakowski, P.</au><au>Triyoso, D. H.</au><au>Nolan, M. G.</au><au>Yiang, K. Y.</au><au>Chu, S.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors</atitle><btitle>2013 IEEE International Integrated Reliability Workshop Final Report</btitle><stitle>IIRW</stitle><date>2013-10</date><risdate>2013</risdate><spage>185</spage><epage>186</epage><pages>185-186</pages><issn>1930-8841</issn><eissn>2374-8036</eissn><isbn>1479903507</isbn><isbn>9781479903504</isbn><eisbn>9781479903528</eisbn><eisbn>1479903515</eisbn><eisbn>1479903523</eisbn><eisbn>9781479903511</eisbn><abstract>In this paper, the authors have shown that the Al-doping concentration of ZrO 2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO 2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.</abstract><pub>IEEE</pub><doi>10.1109/IIRW.2013.6804190</doi><tpages>2</tpages></addata></record> |
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| ispartof | 2013 IEEE International Integrated Reliability Workshop Final Report, 2013, p.185-186 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Capacitance Capacitors Leakage currents Materials MIM capacitors Semiconductor device reliability |
| title | Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors |
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