Reliability comparison of pure ZrO2 and Al− doped ZrO2 MIM capacitors

In this paper, the authors have shown that the Al-doping concentration of ZrO 2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO 2 suffers from early failures and uncontrolled leakage mechanisms. High Al-con...

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Hauptverfasser: Seidel, K., Weinreich, W., Polakowski, P., Triyoso, D. H., Nolan, M. G., Yiang, K. Y., Chu, S.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In this paper, the authors have shown that the Al-doping concentration of ZrO 2 based dielectrics in BEOL has a big influence on electrical properties and reliability. Despite steep field acceleration behavior undoped ZrO 2 suffers from early failures and uncontrolled leakage mechanisms. High Al-concentrations also show higher leakage current and less reliability. It is recommended to apply only small Al-doping concentrations in order to benefit from good field acceleration and capacitance density as well as low leakage current.
ISSN:1930-8841
2374-8036
DOI:10.1109/IIRW.2013.6804190